Datasheet for 129470-HMC821LP6CE:
- Manufacturer Part Number : 129470-HMC821LP6CE
- Manufacturer : AD
- Description : 0.3 or 0.4 GHz to 6 GHz, 35 W, GaN Power Amplifier IC
- Series : HMC8205
- Reference Price : USD 0
- Our Price : We have a better price, contact us by email
- Product Type : RF Amplifiers
- Function : Power Amplifiers
- Current Suggest : Recommended for New Designs
- Status : Production
- ROHS Status : ROHS Compliant (Lead Free)
- Package Type : Evaluation Kit - 2fo (Includes: Eval PCB, USB Interface, CD)
- Pins : -
- MFG Package Case : -
- Part Type : EVAL
- Standard Packing Type : -
- Standard Packing Quantity : -
- Working Temperature : -
- Other Part Number : 129470-HMC821LP6CE
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
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- High PSAT: 46 dBm
- High power gain: 20 dB
- High PAE: 38%
- Instantaneous bandwidth: 0.3 GHz to 6 GHz
- Supply voltage: VDD = 50 V at 1300 mA
- 10-lead LDCC package
- High output power: 45.5 dBm typical at PIN = 24 dBm
- High power gain: 22 dB typical at PIN = 24 dBm
- High PAE: 40% typical at PIN = 28 dBm
- Die size: 4.8 mm × 3.4 mm × 0.1 mm
The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.
The HMC8205BF10 is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.
The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).
The HMC8205BCHIPS is a gallium nitride (GaN), broadbandpower amplifier that delivers 45.5 dBm (35 W) with 40% poweradded efficiency (PAE) across an instantaneous bandwidth of0.4 GHz to 6 GHz. No external matching is required to achievefull band operation. No external inductor is required to bias theamplifier. In addition, dc blocking capacitors for the RFIN andRFOUT pins are integrated into the HMC8205BCHIPS.
The HMC8205BCHIPS is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.
Applications
- Military jammers
- Commercial and military radar
- Power amplifier stage for wireless infrastructure
- Test and measurement equipment
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
