Datasheet for ADL6316ACCZ:
- Manufacturer Part Number : ADL6316ACCZ
- Manufacturer : AD
- Description : 500 MHz to 1000 MHz Transmit VGAfor Use with RF DACs and Transceivers IC
- Series : ADL6316
- Reference Price : USD 5.544
- Our Price : We have a better price, contact us by email
- Product Type : Variable Gain Amplifiers (VGA)
- Function : Digital Control VGAs
- Current Suggest : Recommended for New Designs
- Status : Production
- ROHS Status : ROHS Compliant (Lead Free)
- Package Type : 38-Lead LGA (10.5mm x 5.5mm x 0.98mm w/ dual EP)
- Pins : 38
- MFG Package Case : CC-38-1
- Part Type : OTH
- Standard Packing Type : Tray
- Standard Packing Quantity : 208
- Working Temperature : -40 to 105C
- Other Part Number : ADL6316ACCZ
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
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- Transmit VGA for RF DAC, transceiver, and SoC to power amplifier interface
- RF output frequency range: 500 MHz to 1000 MHz
- Internal balun with bias tee to supply RF DAC outputs
- Integrated VVA attenuation range with on-chip DAC: 20.5 dB
- 2-stage high linearity amplifiers
- RF DSA attenuation range: 14 dB with 0.45 dB step resolution
- 50 Ω differential inputs and 50 Ω single-ended output
- Fully programmable via a 4-wire SPI
- Single 5 V supply
- 38-terminal, 10.5 mm × 5.5 mm LGA
The ADL6316 is a transmit variable gain amplifier (VGA) that provides an interface from radio frequency digital-to-analog converters (RF DACs), transceivers, and systems on a chip (SoC) to power amplifiers. Integrated balun and hybrid couplers allow high performance RF capability in the frequency range of 500 MHz to 1000 MHz.
To optimize performance vs. power level, the ADL6316 includes a voltage variable attenuator (VVA), high linearity amplifiers, and a digital step attenuator (DSA). All of the devices integrated into the ADL6316 are programmable via a 4-wire serial port interface (SPI).
The ADL6316 is manufactured on an advanced silicon germanium (SiGe), bipolar complementary metal-oxide semiconductor (BiCMOS) process.
Applications
- 2G/3G/4G/long-term evolution (LTE) in FDD/TDD broadband communication systems
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
