Datasheet for ADMV7810-SX:
- Manufacturer Part Number : ADMV7810-SX
- Manufacturer : AD
- Description : 81 GHz to 86 GHz, 1 W E-Band Power Amplifier with Power Detector IC
- Series : ADMV7810
- Reference Price : USD 0
- Our Price : We have a better price, contact us by email
- Product Type : RF Amplifiers
- Function : Power Amplifiers
- Current Suggest : Recommended for New Designs
- Status : Production
- ROHS Status : ROHS Compliant (Lead Free)
- Package Type : CHIPS OR DIE
- Pins : 40
- MFG Package Case : C-40-3
- Part Type : REEL
- Standard Packing Type : Tray
- Standard Packing Quantity : 2
- Working Temperature : -55 to 85C
- Other Part Number : ADMV7810-SX
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
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- Gain: 20 dB typical
- Output power for 1 dB compression: 28 dBm typical
- Saturated output power: 29 dBm typical
- Output third-order intercept: 33 dBm typical
- Input return loss: 12 dB typical
- Output return loss: 20 dB typical
- DC supply: 4 V at 800 mA
- No external matching required
- Die size: 2.999 mm × 3.799 mm × 0.05 mm
The ADMV7810 is an integrated E-band gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), medium power amplifier with a temperature compensated on-chip power detector that operates from 81 GHz to 86 GHz. The ADMV7810 provides 20 dB of gain, 28 dBm of output power at 1 dB compression, and 29 dBm of saturated output power at 18% power added efficiency from a 4 V power supply. The ADMV7810 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. The amplifier configuration and high gain make the device an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port. The ADMV7810 is available in a 40-pad bare die (CHIP) and operates over the −55°C to +85°C temperature range.
Applications
- E-band communication systems
- High capacity wireless backhaul radio systems
- Test and measurement
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
