Datasheet for EV1HMC1118LP3D:
- Manufacturer Part Number : EV1HMC1118LP3D
- Manufacturer : AD
- Description : >10 W (42 dBm), 2.7 GHz to 3.8 GHz, GaN Power Amplifier IC
- Series : HMC1114PM5E
- Reference Price : USD 0
- Our Price : We have a better price, contact us by email
- Product Type : RF Amplifiers
- Function : Power Amplifiers
- Current Suggest : Recommended for New Designs
- Status : Production
- ROHS Status : ROHS Compliant (Lead Free)
- Package Type : Evaluation Board
- Pins : -
- MFG Package Case : -
- Part Type : EVAL
- Standard Packing Type : -
- Standard Packing Quantity : -
- Working Temperature : -
- Other Part Number : EV1HMC1118LP3D
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
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TThe HMC1114PM5E is a gallium nitride (GaN), broadband power amplifier delivering >10 W (up to 42 dBm) typical with up to 55% power added efficiency (PAE) across an instantaneous bandwidth range of 2.7 GHz to 3.8 GHz, at an input power (PIN) of 18 dBm. The gain flatness is <1 dB typical at small signal levels.
The HMC1114PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.
Applications
- Extended battery operation for public mobile radios
- Power amplifier stage for wireless infrastructure
- Test and measurement equipment
- Commercial and military radars
- General-purpose transmitter amplification
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
