Datasheet for HMC1126:
- Manufacturer Part Number : HMC1126
- Manufacturer : AD
- Description : GaAs pHEMT Power Amplifier, 2 - 50 GHz
- Series : HMC1126
- Reference Price : USD 0
- Our Price : We have a better price, contact us by email
- Product Type : RF Amplifiers
- Function : Low Noise Amplifiers
- Current Suggest : Production
- Status : Production
- RoHS Status: -
- Voltage: -
- Feature: -
- Package Case: -
- Temperature Range: -
- Packing: Reel/Tray/Tube
- Standard Packing Quantity: -
- Country of Origin: -
- Other Part Number : HMC1126
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
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- Output power for 1 dB compression (P1dB): 17.5 dB typical
- Saturated output power (PSAT): 21 dBm typical
- Gain: 11 dB typical
- Output third-order intercept (IP3): 28 dBm typical
- Supply voltage: 5 V at 65 mA
- 50 Ω matched input/output
- Die size: 2.3 mm × 1.45 mm × 0.05 mm
The HMC1126 is a gallium arsenide (GaAs), pseudomorphic highelectron mobility transfer (pHEMT), monolithic microwaveintegrated circuit (MMIC), distributed power amplifier thatoperates from 2 GHz to 50 GHz. The HMC1126 provides 11 dBof gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dBgain compression, while requiring 65 mA from a 5 V supply.
The HMC1126 amplifier inputs/outputs are internally matchedto 50 Ω facilitating integration into multichip modules (MCMs).All data is taken with the chip connected via two 0.025 mm (1 mil)wire bonds of minimal length 0.31 mm (12 mils).
Applications
- Test instrumentation
- Microwave radios and VSATs
- Military and space
- Telecommunications infrastructure
- Fiber optics
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.
