Datasheet for HMC414MS8GETR:
- Manufacturer Part Number : HMC414MS8GETR
- Manufacturer : AD
- Description : InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz IC
- Series : HMC414
- Reference Price : USD 0
- Our Price : We have a better price, contact us by email
- Product Type : RF Amplifiers
- Function : Power Amplifiers
- Current Suggest : Recommended for New Designs
- Status : Production
- ROHS Status : ROHS Compliant (Lead Free)
- Package Type : 8-Lead MSOP w/ EP
- Pins : 8
- MFG Package Case : HRH-8-1
- Part Type : REEL
- Standard Packing Type : Reel
- Standard Packing Quantity : 500
- Working Temperature : -40 to 85C
- Other Part Number : HMC414MS8GETR
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
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The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.
Applications
- BLUETOOTH
- MMDS
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.