Datasheet for HMC415:
- Manufacturer Part Number : HMC415
- Manufacturer : AD
- Description : InGaP HBT Power Amplifier SMT, 4.9 - 5.9 GHz
- Series : HMC415
- Reference Price : USD 0
- Our Price : We have a better price, contact us by email
- Product Type : RF Amplifiers
- Function : Driver Amplifiers
- Current Suggest : Recommended for New Designs
- Status : Production
- RoHS Status: -
- Voltage: -
- Feature: -
- Package Case: -
- Temperature Range: -
- Packing: Reel/Tray/Tube
- Standard Packing Quantity: -
- Country of Origin: -
- Other Part Number : HMC415
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
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The HMC415LP3(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3(E) achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.
Applications
- 802.11a WLAN
- HiperLAN WLAN
- Access Points
- UNII & ISM Radios
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.