Datasheet for HMC457QS16GETR:
- Manufacturer Part Number : HMC457QS16GETR
- Manufacturer : AD
- Description : 1 Watt Power Amplifier SMT, 1.7 - 2.2 GHz IC
- Series : HMC457
- Reference Price : USD 0
- Our Price : We have a better price, contact us by email
- Product Type : RF Amplifiers
- Function : Power Amplifiers
- Current Suggest : Not Recommended for New Designs
- Status : Production
- ROHS Status : ROHS Compliant (Lead Free)
- Package Type : 16-Lead QSOP w/ EP
- Pins : 16
- MFG Package Case : HRC-16-1
- Part Type : REEL
- Standard Packing Type : Reel
- Standard Packing Quantity : 500
- Working Temperature : -40 to 85C
- Other Part Number : HMC457QS16GETR
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
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The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.
Applications
- CDMA & W-CDMA
- GSM, GPRS & Edge
- Base Stations & Repeaters
This designates products ADI does not recommend broadly for new designs.