- Manufacturer Part Number : HMC457
- Manufacturer : AD
- Description : 1 Watt Power Amplifier SMT, 1.7 - 2.2 GHz
- Series : HMC457
- Reference Price : USD 0
- Our Price : We have a better price, contact us by email
- Product Type : RF Amplifiers
- Function : Power Amplifiers
- Current Suggest : Not Recommended for New Designs
- Status : Production
- RoHS Status: -
- Voltage: -
- Feature: -
- Package Case: -
- Temperature Range: -
- Packing: Reel/Tray/Tube
- Standard Packing Quantity: -
- Country of Origin: -
- Other Part Number : HMC457
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
Contact us to check the best price and real time inventory quantity for HMC457. If you need any more information about HMC457, you can also send us by email. Our email is [email protected], we will reply you in 12 hours.
The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.
Applications
- CDMA & W-CDMA
- GSM, GPRS & Edge
- Base Stations & Repeaters
This designates products ADI does not recommend broadly for new designs.