- Manufacturer Part Number : HMC606LC5
- Manufacturer : AD
- Description : GaAs, InGaP, HBT, MMIC, Ultralow Phase Noise, Distributed Amplifier, 2 GHz to 18 GHz
- Series : HMC606LC5
- Reference Price : USD 0
- Our Price : We have a better price, contact us by email
- Product Type : RF Amplifiers
- Function : Wideband Distributed Amplifiers
- Current Suggest : Production
- Status : Production
- RoHS Status: -
- Voltage: -
- Feature: -
- Package Case: -
- Temperature Range: -
- Packing: Reel/Tray/Tube
- Standard Packing Quantity: -
- Country of Origin: -
- Other Part Number : HMC606LC5
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
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The HMC606LC5 is a gallium arsenide (GaAs), indium gallium phosphide (InGaP), heterojunction bipolar transistor (HBT), monolithic microwave integrated circuit (MMIC) distributed amplifier housed in a 32-terminal, ceramic, leadless chip carrier (LCC) package that operates from 2 GHz to 18 GHz. With an input signal of 12 GHz, the amplifier provides ultralow phase noise performance of −160 dBc/Hz at a 10 kHz offset, representing a significant improvement over field effect transistor (FET)-based distributed amplifiers.
The HMC606LC5 provides 13.5 dB of small signal gain, 27 dBm output IP3, and 15 dBm of output power for 1 dB compression while requiring 64 mA from a 5.0 V supply. The input and output of the HMC606LC5 amplifier are internally matched to 50 Ω and are internally dc blocked.
Applications
- Radars, electronic warfare (EW), and electronic counter measures (ECMs)
- Microwave radios
- Test instrumentation
- Military and space
- Fiber optic systems
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.