Hot Selling IC
Logo
Enter a Part Number:
HMC637BPM5E picture
Best Price NOW
Manufacturer / Brand: AD
Details: GaAs, pHEMT, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier
Series: HMC637BPM5E
Quantity Available: Over 39370 pieces

Datasheet for HMC637BPM5E:

HMC637BPM5E datasheet
Price for HMC637BPM5E
Product Parameters
  • Manufacturer Part Number : HMC637BPM5E
  • Manufacturer : AD
  • Description : GaAs, pHEMT, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier
  • Series : HMC637BPM5E
  • Reference Price : USD 0
  • Our Price : We have a better price, contact us by email
  • Product Type : RF Amplifiers
  • Function : Wideband Distributed Amplifiers
  • Current Suggest : Recommended for New Designs
  • Status : Production
  • RoHS Status: -
  • Voltage: -
  • Feature: -
  • Package Case: -
  • Temperature Range: -
  • Packing: Reel/Tray/Tube
  • Standard Packing Quantity: -
  • Country of Origin: -
  • Other Part Number : HMC637BPM5E
  • Shipping methods : DHL FEDEX UPS TNT
  • Delivery Time : Ship within 1 day.
  • Manufacturer Production time : 6-8 weeks (Normally have stocks)
  • Weight : 0.001KG

Contact us to check the best price and real time inventory quantity for HMC637BPM5E. If you need any more information about HMC637BPM5E, you can also send us by email. Our email is [email protected], we will reply you in 12 hours.

Request Quotation for HMC637BPM5E
Part Number (*) Quantity (*) Target Price ($)
Your Contact Information
Company(*) Country(*)
Name(*) Email(*)
Message:
ATTN: You can send us by email: [email protected] (We will reply quickly)
Related IC Components
Features and Benefits of HMC637BPM5E
Product Detailed Description for HMC637BPM5E

The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device is self biased in normal operation and features optional bias control for quiescent current (IDQ) adjustment and for second-order intercept (IP2) and third-order intercept (IP3) optimization. The amplifier operates from dc to 7.5 GHz, providing 15.5 dB of small signal gain, 28 dBm output power at 1 dB gain compression, a typical output IP3 of 39 dBm, and a 3.5 dB noise figure, while requiring 345 mA from a 12 V supply voltage (VDD). Gain flatness is excellent from dc to 7.5 GHz at ±0.5 dB typical, making the HMC637BPM5E ideal for military, space, and test equipment applications. The HMC637BPM5E also features inputs/outputs (I/Os) that are internally matched to 50 Ω, housed in a RoHS-compliant, 5 mm × 5 mm, premolded cavity, lead frame chip scale package (LFCSP), making the device compatible with high volume, surface-mount technology (SMT) assembly equipment.

Applications

  • Military and space
  • Test Instrumentation
Lifecycle information of HMC637BPM5E

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

HMC637BPM5E More photos
  • QUALITY GUARANTEE
  • FAST DELIVERY
  • BEST PRICE
  • Stocking Distributor for All series AD IC
    Copyright © 2001-2020 BYCHIPS Limited
    bychips.com