- Manufacturer Part Number : HMC7229LS6
- Manufacturer : AD
- Description : GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz
- Series : HMC7229LS6
- Reference Price : USD 0
- Our Price : We have a better price, contact us by email
- Product Type : RF Amplifiers
- Function : Power Amplifiers
- Current Suggest : Production
- Status : Production
- RoHS Status: -
- Voltage: -
- Feature: -
- Package Case: -
- Temperature Range: -
- Packing: Reel/Tray/Tube
- Standard Packing Quantity: -
- Country of Origin: -
- Other Part Number : HMC7229LS6
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
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The HMC7229LS6 is a four stage, gallium arsenide (GaAs),pseudomorphic high electron mobility transfer (pHEMT),monolithic microwave integrated circuit (MMIC), 1 W poweramplifier, with an integrated temperature compensated on-chippower detector that operates between 37 GHz to 40 GHz. TheHMC7229LS6 provides 24 dB of gain and 32 dBm of saturatedoutput power at 18% PAE at 39 GHz from a 6 V supply. With anexcellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linearapplications such as high capacity, point to point or multipointradios or VSAT/SATCOM applications demanding 32 dBm ofefficient saturated output power. The radio frequency (RF)input/outputs are internally matched and dc blocked for ease ofintegration into higher level assemblies. The HMC7229LS6 ishoused in a ceramic, 6 mm × 6 mm, high frequency, air cavitypackage that exhibits low thermal resistance and is compatiblewith surface-mount manufacturing techniques.
Applications
- Point to point radios
- Point to multipoint radios
- Very small aperture terminal (VSAT) and satellite communications (SATCOM)
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.