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Manufacturer / Brand: AD
Details: 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block IC
Series: HMC788A
Quantity Available: Over 21480 pieces

Datasheet for HMC788ACPSZ-EP-PT:

HMC788ACPSZ-EP-PT datasheet
Price for HMC788ACPSZ-EP-PT
Product Parameters
  • Manufacturer Part Number : HMC788ACPSZ-EP-PT
  • Manufacturer : AD
  • Description : 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block IC
  • Series : HMC788A
  • Reference Price : USD 0
  • Our Price : We have a better price, contact us by email
  • Product Type : RF Amplifiers
  • Function : Gain Blocks
  • Current Suggest : Recommended for New Designs
  • Status : Production
  • ROHS Status : ROHS Compliant (Lead Free)
  • Package Type : 6-Lead LFCSP (2mm x 2mm x 0.85mm)
  • Pins : 6
  • MFG Package Case : CP-6-10
  • Part Type : OTH
  • Standard Packing Type : Cut Tape
  • Standard Packing Quantity : 50
  • Working Temperature : -55 to 105C
  • Other Part Number : HMC788ACPSZ-EP-PT
  • Shipping methods : DHL FEDEX UPS TNT
  • Delivery Time : Ship within 1 day.
  • Manufacturer Production time : 6-8 weeks (Normally have stocks)
  • Weight : 0.001KG

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Features and Benefits of HMC788ACPSZ-EP-PT
  • Gain: 14 dB typical
  • Operational frequency range: 0.01 GHz to 10 GHz
  • Input/output internally matched to 50 Ω
  • High input linearity
    • 1 dB compression (P1dB): 20 dBm typical
    • Output third-order intercept (OIP3): 33 dBm typical
  • Supply voltage: 5 V typical
  • 2 mm × 2 mm, 6-lead lead frame chip scale package 
HMC788A-EP supports defense and aerospace applications (AQEC standard)
  • Download the HMC788A-EP data sheet (pdf)
  • Extended industrial temperature range: −55°C to +105°C
  • Controlled manufacturing baseline
  • One assembly/test site
  • One fabrication site
  • Enhanced product change notification
  • Qualification data available on request
Product Detailed Description for HMC788ACPSZ-EP-PT

The HMC788A is a 0.01 GHz to 10 GHz, gain block, monolithic microwave integrated circuit (MMIC) amplifier using gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) technology.

This 2 mm × 2 mm LFCSP amplifier can be used as either a cascadable 50 Ω gain stage, or to drive the local oscillator (LO) port of many of the single and double balanced mixers from Analog Devices, Inc. with up to 20 dBm output power.

The HMC788A offers 14 dB of gain and an output IP3 of 33 dBm while requiring only 76 mA from a 5 V supply.

The Darlington feedback pair exhibits reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.

Applications

  • Cellular, 3G, LTE, WiMAX, and 4G
  • LO driver applications
  • Microwave radio
  • Test and measurement equipment
  • Ultra wideband (UWB) communications
Lifecycle information of HMC788ACPSZ-EP-PT

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

HMC788ACPSZ-EP-PT More photos
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