Datasheet for HMC-ABH209-DIE:
- Manufacturer Part Number : HMC-ABH209-DIE
- Manufacturer : AD
- Description : Medium Power Amplifier Chip, 55 - 65 GHz
- Series : HMC-ABH209-DIE
- Reference Price : USD 0
- Our Price : We have a better price, contact us by email
- Product Type : RF Amplifiers
- Function : Driver Amplifiers
- Current Suggest : Recommended for New Designs
- Status : Production
- RoHS Status: -
- Voltage: -
- Feature: -
- Package Case: -
- Temperature Range: -
- Packing: Reel/Tray/Tube
- Standard Packing Quantity: -
- Country of Origin: -
- Other Part Number : HMC-ABH209-DIE
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
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The HMC-ABH209 is a high dynamic range, two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 55 and 65 GHz. The HMCABH209 provides 13 dB of gain, and an output power of +16 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.
The HMC-ABH209 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Applications
- Short Haul / High Capacity Links
- Wireless LAN Bridges
- Military & Space
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.