Datasheet for MAT12AHZ:
- Manufacturer Part Number : MAT12AHZ
- Manufacturer : AD
- Description : Audio, Dual-Matched NPN Transistor IC
- Series : MAT12
- Reference Price : USD 13.16
- Our Price : We have a better price, contact us by email
- Product Type : Matched Transistors
- Function : -
- Current Suggest : Production
- Status : Production
- ROHS Status : ROHS Compliant (Lead Free)
- Package Type : 6-Lead TO-78
- Pins : 6
- MFG Package Case : H-6
- Part Type : OTH
- Standard Packing Type : Tube
- Standard Packing Quantity : 100
- Working Temperature : -40 to 85C
- Other Part Number : MAT12AHZ
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
Contact us to check the best price and real time inventory quantity for MAT12AHZ. If you need any more information about MAT12AHZ, you can also send us by email. Our email is [email protected], we will reply you in 12 hours.
- Very low voltage noise: 1nV/√Hz max @ 100Hz
- Excellent current gain match: 0.5% typical
- Low offset voltage (VOS): 200 µV maximum
- Outstanding offset voltage drift:0.03 µV/°C typical
- High gain bandwidth product: 200 MHz
The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralownoise audio systems.
With its extremely low input base spreading resistance (rbb'is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the MAT12 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.
Excellent matching of the current gain (ΔhFE) to about 0.5% and low VOS of less than 10 µV typical make the MAT12 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion.
Stability of the matching parameters is guaranteed by protection diodes across the base emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base emitter junction.
The MAT12 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the MAT12 does not need offset trimming in most circuit applications.
The MAT12 is a good replacement for the MAT02, and its performance and characteristics are guaranteed over the extended temperature range of −40°C to +85°C
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.