Datasheet for EVAL-ADUM4120EBZ:
- Manufacturer Part Number : EVAL-ADUM4120EBZ
- Manufacturer : AD
- Description : Isolated, Precision Gate Driver with 2 A Output IC
- Series : ADuM4120-1
- Reference Price : USD 0
- Our Price : We have a better price, contact us by email
- Product Type : Isolated Gate Drivers
- Function : -
- Current Suggest : Recommended for New Designs
- Status : Production
- ROHS Status : ROHS Compliant (Lead Free)
- Package Type : Evaluation Board
- Pins : -
- MFG Package Case : -
- Part Type : EVAL
- Standard Packing Type : -
- Standard Packing Quantity : -
- Working Temperature : -
- Other Part Number : EVAL-ADUM4120EBZ
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
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The ADuM4120/ADuM4120-1 are 2 A isolated, single-channel drivers that employ Analog Devices, Inc., iCoupler® technology to provide precision isolation. The ADuM4120/ADuM4120-1provide 5 kV rms isolation in the 6-lead wide body SOIC package with increased creepage. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics, such as the combination of pulse transformers and gate drivers.
The ADuM4120/ADuM4120-1 operate with input supplies ranging from 2.5 V to 6.5 V, providing compatibility with lowervoltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM4120/ADuM4120-1 offer the benefit of true, galvanic isolation betweenthe input and the output.
Options exist for models with and without an input glitch filter. The glitch filter helps reduce the chance of noise on the input pintriggering an output.
As a result, the ADuM4120/ADuM4120-1 provide reliable control over the switching characteristics of insulated gatebipolar transistor (IGBT)/metal-oxide semiconductor field effect transistor (MOSFET) configurations over a wide range of switching voltages.
Applications
- Switching power supplies
- IGBT/MOSFET gate drivers
- Industrial inverters
- Gallium nitride (GaN)/silicon carbide (SiC) power devices
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
