Datasheet for ADL5505-EVALZ:
- Manufacturer Part Number : ADL5505-EVALZ
- Manufacturer : AD
- Description : 450 MHz TO 6000 MHz TruPwr™ Detector IC
- Series : ADL5505
- Reference Price : USD 0
- Our Price : We have a better price, contact us by email
- Product Type : RF Power Detectors
- Function : RMS Responding Power Detectors
- Current Suggest : Recommended for New Designs
- Status : Production
- ROHS Status : ROHS Compliant (Lead Free)
- Package Type : Evaluation Board
- Pins : -
- MFG Package Case : -
- Part Type : EVAL
- Standard Packing Type : -
- Standard Packing Quantity : -
- Working Temperature : -
- Other Part Number : ADL5505-EVALZ
- Shipping methods : DHL FEDEX UPS TNT
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks (Normally have stocks)
- Weight : 0.001KG
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The ADL5505 is a TruPwr™ mean-responding (true rms) powerdetector for use in high frequency receiver and transmitter signalchains from 450 MHz to 6000 MHz. Requiring only a singlesupply between 2.5 V and 3.3 V, the detector draws less than1.8 mA. The input is internally ac-coupled and has a nominalinput impedance of 500 Ω. The rms output is a linear-respondingdc voltage with a conversion gain of 1.86 V/V rms at 900 MHz.
The ADL5505 is a highly accurate, easy to use means ofdetermining the rms of complex waveforms. It can be used forpower measurements of both simple and complex waveformsbut is particularly useful for measuring high crest factor (highpeak-to-rms ratio) signals, such as W-CDMA, CDMA2000,WiMAX, WLAN, and LTE waveforms.
The on-chip modulation filter provides adequate averaging formost waveforms. An on-chip, 100 Ω series resistance at theoutput, combined with an external shunt capacitor, creates a low-passfilter response that reduces the residual ripple in the dc outputvoltage.
The ADL5505 offers excellent temperature stability across a30 dB range and near 0 dB measurement error across temperatureover the top portion of the dynamic range. In addition to itstemperature stability, the ADL5505 offers low process variationsthat further reduce calibration complexity.
The power detector operates from −40°C to +85°C and isavailable in an 4-ball, 0.8 mm × 0.8 mm wafer-level chip scalepackage. It is fabricated on a high fT silicon BiCMOS process.
Applications
- Power measurement of W-CDMA, CDMA2000, QPSK-/QAM-based OFDM (LTE and WiMAX), and other complex modulation waveforms
- RF transmitter or receiver power measurement
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
