Hot Selling IC
Logo
Enter a Part Number:
ADRF5132BCPZN picture
Best Price NOW
Manufacturer / Brand: AD
Details: High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz IC
Series: ADRF5132
Quantity Available: Over 66540 pieces

Datasheet for ADRF5132BCPZN:

ADRF5132BCPZN datasheet
Price for ADRF5132BCPZN
Product Parameters
  • Manufacturer Part Number : ADRF5132BCPZN
  • Manufacturer : AD
  • Description : High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz IC
  • Series : ADRF5132
  • Reference Price : USD 8.832
  • Our Price : We have a better price, contact us by email
  • Product Type : RF Switches
  • Function : SPST, SPDT, SP3T, SP4T, SP5T, SP6T, SP8T
  • Current Suggest : Recommended for New Designs
  • Status : Production
  • ROHS Status : ROHS Compliant (Lead Free)
  • Package Type : 16-Lead LFCSP (3mm x 3mm w/ EP)
  • Pins : 16
  • MFG Package Case : CP-16-35
  • Part Type : OTH
  • Standard Packing Type : Cut Tape
  • Standard Packing Quantity : 500
  • Working Temperature : -40 to 105C
  • Other Part Number : ADRF5132BCPZN
  • Shipping methods : DHL FEDEX UPS TNT
  • Delivery Time : Ship within 1 day.
  • Manufacturer Production time : 6-8 weeks (Normally have stocks)
  • Weight : 0.001KG

Contact us to check the best price and real time inventory quantity for ADRF5132BCPZN. If you need any more information about ADRF5132BCPZN, you can also send us by email. Our email is [email protected], we will reply you in 12 hours.

Request Quotation for ADRF5132BCPZN
Part Number (*) Quantity (*) Target Price ($)
Your Contact Information
Company(*) Country(*)
Name(*) Email(*)
Message:
ATTN: You can send us by email: [email protected] (We will reply quickly)
Related IC Components
Features and Benefits of ADRF5132BCPZN
  • Reflective, 50 Ω design
  • Low insertion loss: 0.6 dB typical at 2.7 GHz
  • High power handling at TCASE = 105°C
    • Long-term (>10 years operation)
      • Peak power: 43 dBm
      • CW power: 38 dBm
      • LTE power average (8 dB PAR): 35 dBm
  • Single event (<10 sec operation)
    • LTE power average (8 dB PAR): 41 dBm
  • High linearity
    • P0.1dB: 42.5 dBm typical
    • IP3: 65 dBm typical at 2.0 GHz to 4.0 GHz
  • ESD ratings
    • HBM: 2 kV, Class 2
    • CDM: 1.25 kV
  • Single positive supply: 5 V
  • Positive control, CMOS/TTL compatible
  • 16-lead, 3 mm × 3 mm LFCSP package
Product Detailed Description for ADRF5132BCPZN

The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5132 has high power handling of 35 dBm LTE (average typical at 105°C), a low insertion loss of 0.6 dB at 2.7 GHz, input third-order intercept of 65 dBm (typical), and 0.1 dB compression (P0.1dB) of 42.5 dBm.

The on-chip circuitry operates at a single, positive supply voltage of 5 V and a typical supply current of 1.1 mA typical, making the ADRF5132 an ideal alternative to pin diode-based switches.

The device is in a RoHS compliant, compact, 16-lead, 3 mm × 3 mm LFCSP package.

Applications

  • Cellular/4G infrastructure
  • Wireless infrastructure
  • Military and high reliability applications
  • Test equipment
  • Pin diode replacement
Lifecycle information of ADRF5132BCPZN

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

ADRF5132BCPZN More photos
  • QUALITY GUARANTEE
  • FAST DELIVERY
  • BEST PRICE
  • Stocking Distributor for All series AD IC
    Copyright © 2001-2020 BYCHIPS Limited
    bychips.com