Hot Selling IC
Logo
Enter a Part Number:
ADRF5132BCPZN-R7 picture
Best Price NOW
Manufacturer / Brand: AD
Details: High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz IC
Series: ADRF5132
Quantity Available: Over 5380 pieces

Datasheet for ADRF5132BCPZN-R7:

ADRF5132BCPZN-R7 datasheet
Price for ADRF5132BCPZN-R7
Product Parameters
  • Manufacturer Part Number : ADRF5132BCPZN-R7
  • Manufacturer : AD
  • Description : High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz IC
  • Series : ADRF5132
  • Reference Price : USD 8.832
  • Our Price : We have a better price, contact us by email
  • Product Type : RF Switches
  • Function : SPST, SPDT, SP3T, SP4T, SP5T, SP6T, SP8T
  • Current Suggest : Recommended for New Designs
  • Status : Production
  • ROHS Status : ROHS Compliant (Lead Free)
  • Package Type : 16-Lead LFCSP (3mm x 3mm w/ EP)
  • Pins : 16
  • MFG Package Case : CP-16-35
  • Part Type : REEL
  • Standard Packing Type : Reel
  • Standard Packing Quantity : 500
  • Working Temperature : -40 to 105C
  • Other Part Number : ADRF5132BCPZN-R7
  • Shipping methods : DHL FEDEX UPS TNT
  • Delivery Time : Ship within 1 day.
  • Manufacturer Production time : 6-8 weeks (Normally have stocks)
  • Weight : 0.001KG

Contact us to check the best price and real time inventory quantity for ADRF5132BCPZN-R7. If you need any more information about ADRF5132BCPZN-R7, you can also send us by email. Our email is [email protected], we will reply you in 12 hours.

Request Quotation for ADRF5132BCPZN-R7
Part Number (*) Quantity (*) Target Price ($)
Your Contact Information
Company(*) Country(*)
Name(*) Email(*)
Message:
ATTN: You can send us by email: [email protected] (We will reply quickly)
Related IC Components
Features and Benefits of ADRF5132BCPZN-R7
  • Reflective, 50 Ω design
  • Low insertion loss: 0.6 dB typical at 2.7 GHz
  • High power handling at TCASE = 105°C
    • Long-term (>10 years operation)
      • Peak power: 43 dBm
      • CW power: 38 dBm
      • LTE power average (8 dB PAR): 35 dBm
  • Single event (<10 sec operation)
    • LTE power average (8 dB PAR): 41 dBm
  • High linearity
    • P0.1dB: 42.5 dBm typical
    • IP3: 65 dBm typical at 2.0 GHz to 4.0 GHz
  • ESD ratings
    • HBM: 2 kV, Class 2
    • CDM: 1.25 kV
  • Single positive supply: 5 V
  • Positive control, CMOS/TTL compatible
  • 16-lead, 3 mm × 3 mm LFCSP package
Product Detailed Description for ADRF5132BCPZN-R7

The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5132 has high power handling of 35 dBm LTE (average typical at 105°C), a low insertion loss of 0.6 dB at 2.7 GHz, input third-order intercept of 65 dBm (typical), and 0.1 dB compression (P0.1dB) of 42.5 dBm.

The on-chip circuitry operates at a single, positive supply voltage of 5 V and a typical supply current of 1.1 mA typical, making the ADRF5132 an ideal alternative to pin diode-based switches.

The device is in a RoHS compliant, compact, 16-lead, 3 mm × 3 mm LFCSP package.

Applications

  • Cellular/4G infrastructure
  • Wireless infrastructure
  • Military and high reliability applications
  • Test equipment
  • Pin diode replacement
Lifecycle information of ADRF5132BCPZN-R7

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

ADRF5132BCPZN-R7 More photos
  • QUALITY GUARANTEE
  • FAST DELIVERY
  • BEST PRICE
  • Stocking Distributor for All series AD IC
    Copyright © 2001-2020 BYCHIPS Limited
    bychips.com